the SPP1305 is the p-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration ( sot-323 ; sc-70 ) part marking ? -20v/-0.95a,r ds(on) = 280m ? @v gs =-4.5v ? -20v/-0.80a,r ds(on) = 380m ? @v gs =-2.5v ? -20v/-0.70a,r ds(on) = 530m ? @v gs =-1.8v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? sot-323 ( sc?70 ) package design SPP1305 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPP1305s32rg sot-323 05yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPP1305s32rg : tape reel ; pb ? free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss -20 v gate ?source voltage v gss 12 v t a =25 -1.0 continuous drain current(t j =150 ) t a =70 i d -0.7 a pulsed drain current i dm -3 a continuous source current(diode conduction) i s -0.28 a t a =25 0.33 power dissipation t a =70 p d 0.21 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 105 /w SPP1305 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
SPP1305 electrical characteristics (t a =25 un less otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -20 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -0.5 -1.2 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds =-20v,v gs =0v -1 zero gate voltage drain current i dss v ds =-20v,v gs =0v t j =55 -5 ua on-state drain current i d(on) v ds Q -5v,v gs =-4.5v -6 a v gs =-4.5v,i d =-0.95a 0.22 0.28 v gs =-2.5v,i d =-0.80a 0.30 0.38 drain-source on-resistance r ds(on) v gs =-1.8v,i d =-0.70a 0.42 0.53 ? forward transconductance gfs v ds =-5v,i d =-1.0a 3.5 s diode forward voltage v sd i s =-0.5a,v gs =0v -0.8 -1.2 v dynamic total gate charge q g 3.0 4.2 gate-source charge q gs 0.6 gate-drain charge q gd v ds =-4v,v gs =-4.5v i d -1.0a 0.5 nc input capacitance c iss 320 output capacitance c oss 55 reverse transfer capacitance c rss v ds =-4v,v gs =0v f=1mhz 25 pf t d(on) 10 16 turn-on time t r 40 60 t d(off) 18 25 turn-off time t f v dd =-4v,r l =4 ? i d -1.0a,v gen =-4.5v r g =6 ? 15 20 ns smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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